Review of High RF Power Amplifier for 5G Applications

Section: Review Paper
Issue
Vol. 30 No. 1 (2025): Volume 30 Issue 1
Published
Mar 1, 2025
Pages
40-51

Abstract

One of the most important circuits in any wireless communications transmitter is the power amplifier. The 5G base station requires power amplifiers with high output powers, excellent efficiency, and high-power gain. A review of 5G sub-6 GHz base station power amplifier is offered in this paper. This study examined reviewed power amplifier high electron mobility transistor (HEMT) semiconductor technology based on gallium nitride (GaN). The researchers claim that the highest choice for offering high power in the output, high back-off power, and high efficiency is a gallium nitride (GaN HEMT)-based Power amplifier (PA). This study presented a review of class J power amplifier based on GaN HEMTs. Also, the evaluation of Doherty power amplifiers (DPAs) based on class J will be presented in this work.

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Authors

Marwah Ezzulddin Merza

Mechatronics Engineering Departement, Collage of Engineering, University of Mosul, Mosul, Iraq

Khalid Kh. Mohammed

Electrical Engineering Department, Collage of Engineering, University of Mosul, Mosul, Iraq

Identifiers

https://doi.org/10.33899/rengj.2023.141057.1266
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[1]
M. Ezzulddin Merza, مروة, K. Kh. Mohammed, and خالد, “Review of High RF Power Amplifier for 5G Applications”, AREJ, vol. 30, no. 1, pp. 40–51, Mar. 2025.
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