Sheet S, صلاح, Mahmoud H, حازم. Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique. EDUSJ [Internet]. 2008 Jun. 1 [cited 2025 Aug. 4];21(2):1-6. Available from: https://rjps.uomosul.edu.iq/index.php/edusj/article/view/18411