90 nm Current Mirror Based Transimpedance Amplifiers for Fiber Optic Applications

This research displayed the new design of a 90 nm CMOS technology transimpedance amplifier (TIA) with current mirror executed. The goal and challenge in this research are to arrive at low consumption of power while activating other required performances. Integrated circuits CMOS(Complimentary Metal-Oxide Semiconductor) tend to be the best technology achieving the desired level of integration with appropriate speed, cost, and gain for this were used. The proposed transimpedance amplifier (TIA) consists of a common-gate (CG) topology with a current mirror to increase TIA gain and common-source (CS) TIA with the active feedback resistor. In addition, to verify the proposed TIA performance, circuit simulations are done in NI Multisim 14.1 using 90nm CMOS technology parameters. Therefore, the simulation results of the proposed TIA for 90 nm CMOS technology indicate a transimpedance gain of 66.63 dB with -3dB frequency bandwidth of around 1.0 GHz for input capacitance of 250 fF, input-referred noise of 25.413 pA/and with the power consumption of only 1.08mat 1V supply voltage. This low power consumption and supply voltage are the main emphases of this work in comparison with other research literature.