Electron-Electron Scattering In Single Quantum Well GaAs Laser With And Without Screening

Section: Article
Issue
Vol. 24 No. 2 (2011): Volume 24 Issue 2
Published
Nov 30, 1999
Pages
57-65

Abstract

Abstract In this paper we have studied the electron-electron scattering rates in an infinitely deep single quantum well with width (400 ) and for both carrier densities (1 1010 cm-2 and 100 1010 cm-2), we have considered the electron-electron scattering as a function of the initial electron energy with and without screening at all subband carrier-carrier scattering mechanisms.

Authors

Ragheed M. Ibrahim

Department of Physics, College of Education, University of Mosul, Mosul, Iraq

Erada A. Al-Dabbagh

Department of Physics, College of Education, University of Mosul, Mosul, Iraq

Identifiers

https://doi.org/10.33899/edusj.1999.58721
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How to Cite

[1]
R. M. Ibrahim and E. A. Al-Dabbagh, “Electron-Electron Scattering In Single Quantum Well GaAs Laser With And Without Screening”, EDUSJ, vol. 24, no. 2, pp. 57–65, Nov. 1999.